1 these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are pwmdc-dc converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. v ds (v) r ds(on) m( ? )i d (a) 34 @ v gs = 10v 6.9 41 @ v gs = 4.5v 6.0 product summary 30 dual n-channel 30-v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery life ? miniature so-8 surface mount package saves board space ? high power and current handling capability ? low side high current dc-dc converter applications notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature 1 2 3 4 7 8 5 6 symbol limit units v ds 30 v gs 20 t a =25 o c 6.9 t a =70 o c 5.6 i dm 40 i s 1.7 a t a =25 o c2.1 t a =70 o c1.3 t j , t stg -55 to 150 o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w symbol maximum units t <= 10 sec 62.5 o c/w steady-state 110 o c/w thermal resistance ratings parameter maximum junction-to-ambient a r ja ao48 1 8 / mc48 1 8 freescale www.freescale.net.cn free datasheet http:///
2 notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. min typ max gate-threshold voltage v gs(th) v ds = v gs , i d = 250 ua 1 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 24 v, v gs = 0 v 1 v ds = 24 v, v gs = 0 v, t j = 55 o c 10 on-state drain current a i d ( on ) v ds = 5 v, v gs = 10 v 20 a v gs = 10 v, i d = 6.9 a 34 v gs = 4.5 v, i d =6.0 a 41 forward tranconductance a g fs v ds = 15 v, i d = 6.9 a 25 s diode forward voltage v sd i s = 1.7 a, v gs = 0 v 0.77 v total gate charge q g 4.0 gate-source charge q gs 1.1 gate-drain charge q g d 1.4 turn-on delay time t d(on) 12 rise time t r 10 turn-off delay time t d ( off ) 60 fall-time t f 15 source-ddrain reverse recovery time t rr i f = 1.7 a, di/dt = 100 a/us 50 m ? parameter limits unit v dd = 15 v, r l = 15 ? , i d = 1 a, v gen = 10 v v ds = 15 v, v gs = 4.5 v, i d = 6.9 a nc ns dynamic b specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol drain-source on-resistance a r ds(on) freescale reserves the right to make changes without fu rther notice to any products herein. freescale makes no warranty, representation or guarantee regarding the suitability of its produ cts for any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically dis itation special, consequential or incidental damages. ?typical? parameters which may be provide d in freescale data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operati ng parameters, including ?typicals? must be validat ed for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed, intended, or authorized for use as components in sy stems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale product could create a situ ation where personal injury or death may occur. should buyer purchase or use freescale products for any s uch unintended or unauthorized application, buyer s hall indemnify and hold freescale and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, da mages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any cl aim of personal injury or death associated with suc h unintended or unauthorized use, even if such claim alleges that freescale was negligent regarding the design or manufacture of the part. freescale is an equal opportunity/affirmative action employer. claims any and all liability, including without lim ao48 1 8 / mc48 1 8 freescale www.freescale.net.cn
3 typical electrical characteristics (n-channel) figure 3. on-resistance variation with temperature figure 5. transfer characteristics figure 2. on-resistance with drain current figure 4. on-resistance variation with gate to source voltage figure 6. body diode forward voltage variation with source current and temperature figure 1. on-region characteristics 0.6 0.8 1. 0 1. 2 1. 4 1. 6 -50 -25 0 25 50 75 100 125 150 t j juncation temperature (c) normalized r ds (on) v gs = 10v i d = 10a 0 10 20 30 40 50 60 0 1234 56 v gs gate to so urce vo ltage (v) i d drain current (a) 25c 12 5 c -55c v d =5v 0 10 20 30 40 50 00.511.52 vds, drain-source volt age (v) id, drain current (a) 3.0v 6.0v 4.0v v gs = 10v 0.5 0.8 1.1 1.4 1.7 2 0 1020304050 id, drain current (a) rds(on), normalized drain-source on-resistanc e 4.5v 10v 6.0v 0 0.01 0.02 0.03 0.04 0.05 246810 vgs, gate to source voltage (v) rds(on), on-resistance (ohm) i d = 10a t a = 25 o c 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 vsd, body diode forward voltage (v) is, reverse drain current (a) t a = 125 o c 25 o c v gs = 0v ao48 1 8 / mc48 1 8 freescale www.freescale.net.cn
4 typical electrical characteristics (n-channel) figure 11. transient th ermal response curve figure 8. capacitance characteristics figure 10. single pulse maximum power dissipation normalized thermal transien t junction to ambient square wave pulse duration (s) figure 9. threshold vs ambient temperature 0 400 800 1200 1600 0 5 10 15 20 25 30 vds, drain to source voltage (v) capacitance (pf ) ciss crss coss f = 1mhz v gs = 0 v 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t1, time (sec) p(pk), peak transient power (w ) single pulse rqja = 125c/w ta = 25c 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 ta, ambient temperature ( o c) vth, gate-source thresthold voltag e (v) v ds = v gs i d = 250ma 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r qja (t) = r(t) * r qja r qja = 125 c/w t j - t a = p * r qja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single puls e 0.01 0.02 0.05 0.1 0.2 d = 0.5 0 2 4 6 8 10 0246810 qg, charge (nc) vgs gate-source voltage ( v i d =6.9a figure 7. gate charge characteristics ao48 1 8 / mc48 1 8 freescale www.freescale.net.cn
5 package information so-8: 8lead h x 45 ao48 1 8 / mc48 1 8 freescale www.freescale.net.cn
6 ordering information ? am4920n-t1-xx ?a: analog power ? m: mosfet ? 4920: part number ? n: n-channel ? t1: tape & reel ? xx: blank: standard pf: leadfree ao48 1 8 / mc48 1 8 freescale www.freescale.net.cn
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